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nanoimprint lithography : ウィキペディア英語版
nanoimprint lithography
Nanoimprint lithography is a method of fabricating nanometer scale patterns. It is a simple nanolithography process with low cost, high throughput and high resolution. It creates patterns by mechanical deformation of imprint resist and subsequent processes. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting. Adhesion between the resist and the template is controlled to allow proper release.
==History==
The term "Nanoimprint Lithography" (NIL) was coined in the scientific literature in 1996, when Prof. (Stephen Chou ) and his students published a report in ''Science'', although hot embossing (now taken as a synonym of NIL) of thermoplastics had been appearing in the patent literature for a few years already. Soon after the ''science'' paper, many researchers developed different variations and implementations. At this point, nanoimprint lithography has been added to the International Technology Roadmap for Semiconductors (ITRS) for the 32 and 22 nm nodes.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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